Symbol. Parameter. Value. Unit. VCBO. Collector-Emitter Voltage (IE = 0). V. VCEO. Collector-Emitter Voltage (IB = 0). V. VEBO. Emitter-Base Voltage (IC. SMBT A. 1. Oct NPN Silicon Switching Transistor. • High DC current gain: mA to mA. • Low collector-emitter saturation voltage. Datasheet contains the design specifications for product development. Datasheet contains preliminary data; supplementary data will be.
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Retrieved 26 March So if you looking for an NPN transistor that could switch loads of higher current then 2NA might the right choice for your project.
When this transistor is fully biased then it can allow a maximum of mA to flow across the collector and emitter. It can be even worse, since the On Semi PN has the conventional pinout, despite being the same manufacturer and mostly same specifications: The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.
To confirm, you can daasheet check with the hFE function if your meter has that. Build datashet own low-power transmitters: Therefore, it is important to refer to the datasheet for the exact part number and manufacturer. Retrieved from ” https: The 2N is considered a very common transistor,    and is used as an exemplar of an NPN transistor. Hence the 2N pin-out is sadly not standardized.
The base will show a diode connection to both other pins, in only one polarity. JEDEC registered parameters include outline dimensions, small-signal current gaintransition frequencymaximum values for voltage withstand, current rating, power dissipation and temperature rating, and others, measured under standard test conditions.
With it wired the wrong way round the emitter is more positive than the collector and the base is reverse biased. This is the picture of the datasheet for the pins: To make things simple I have shown a simplified circuit to make a transistor as switch. Would you like to answer one of these unanswered questions instead?
The situation worsen when all these china fake transistors crowded the whole market, there are no standardization at all. It is used in a variety of analog amplification and switching applications. This transistor will make it forward biased and thus closes the connection between collector and emitter. The JEDEC registration of a device number ensures particular rated values will be met by all parts offered under that number.
The slightly lower of the two voltages will correspond to the collector-base junctionand the other will be the emitter-base junction. It is frequently used as a small-signal transistor,   and it remains a small general purpose transistor  of enduring popularity.
The 2N is an NPN transistor that can only switch one-third the current of the 2N but has otherwise similar characteristics. To distinguish collector from emitter, you look at the voltage shown in the diode function with the one successful test that found the base. Because it has attracted low-quality or spam answers that had to be removed, posting an answer now requires 10 reputation on this site the association bonus does not count.
If it is to replace a shorted transistor, we will never know if both are the same ebc configuration between your new 2N and the old 2N Complete Technical Details can be found at the 2NA datasheet given at the end of this page.
Commercial transistors Bipolar transistors. Archived from the original on 14 April Views Read Edit View history. They’re listed together because they’re complementary transistors. Billions of units have been manufactured over the past 45 years and there is continuing high volume annual production.
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PN2222A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Applications Can be used to switch high current upto mA loads It can also be used in the various switching applications. In other projects Wikimedia Commons. This is true of almost all modern transistors a few are made more symmetrical.
Wikimedia Commons has media related to 2N Spehro Pefhany k 4 Other part numbers will have different parameters. I am trying to figure out what is going on here. High frequency and microwave engineering. In actual circuit modifications might be required. The exact specifications depend on the manufacturer, case type, and variation. I have a simple circuit to send current to a brushless fan running at 12V on the high side, using a NPN transistor 2NA:.
Use dmy dates from July Commons category link is on Wikidata.
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The BC is a low voltage, low current, general-purpose switching transistor in a TO package. If I set up the circuit for a quick test, it seems that the datasheet datashewt the transistor has the pins swapped. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region and the Base Emitter voltage could be around mV.